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IRL3103SPBF irl3103lpbf hexfet ? power mosfet 04/19/04 parameter typ. max. units r jc junction-to-case ??? 1.6 r ja junction-to-ambient (pcb mount)** ??? 40 thermal resistance www.irf.com 1 v dss = 30v r ds(on) = 12m ? i d = 64a s d g absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 64 i d @ t c = 100c continuous drain current, v gs @ 10v 45 a i dm pulsed drain current 220 p d @t c = 25c power dissipation 94 w linear derating factor 0.63 w/c v gs gate-to-source voltage 16 v i ar avalanche current 34 a e ar repetitive avalanche energy 22 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (irl3103l) is available for low- profile applications. advanced process technology surface mount (irl3103s) low-profile through-hole (irl3103l) 175c operating temperature fast switching fully avalanche rated lead-free description d 2 pak irl3103s to-262 irl3103l c/w pd - 95150
irl3103s/lpbf 2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source c urrent integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 34a, v gs = 0v t rr reverse recovery time ??? 57 86 ns t j = 25c, i f = 34a q rr reverse recovery charge ??? 110 170 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 64 220 a starting t j = 25c, l = 220h r g = 25 ? , i as = 34a, v gs =10v (see figure 12) repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) notes: i sd 34a, di/dt 120a/s, v dd v (br)dss , t j 175c pulse width 400s; duty cycle 2%. this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175c . **when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.028 ??? v/c reference to 25c, i d = 1ma ??? ??? 12 v gs = 10v, i d = 34a ??? ??? 16 v gs = 4.5v, i d = 28a v gs(th) gate threshold voltage 1.0 ??? ??? v v ds = v gs , i d = 250a g fs forward transconductance 22 ??? ??? s v ds = 25v, i d = 34a ??? ??? 25 a v ds = 30v, v gs = 0v ??? ??? 250 v ds = 24v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 16v gate-to-source reverse leakage ??? ??? -100 na v gs = -16v q g total gate charge ??? ??? 33 i d = 34a q gs gate-to-source charge ??? ??? 5.9 nc v ds = 24v q gd gate-to-drain ("miller") charge ??? ??? 17 v gs = 4.5v, see fig. 6 and 13 t d(on) turn-on delay time ??? 8.9 ??? v dd = 15v t r rise time ??? 120 ??? i d = 34a t d(off) turn-off delay time ??? 14 ??? r g = 1.8 ? t f fall time ??? 9.1 ??? v gs = 4.5v, see fig. 10 between lead, 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 1650 ??? v gs = 0v c oss output capacitance ??? 650 ??? v ds = 25v c rss reverse transfer capacitance ??? 110 ??? pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy ??? 1320 130 mj i as = 34a, l = 0.22mh s d g electrical characteristics @ t j = 25c (unless otherwise specified) r ds(on) static drain-to-source on-resistance i gss nh l s internal source inductance ??? 7.5 ??? l d internal drain inductance ??? 4.5 ??? i dss drain-to-source leakage current m ?
irl3103s/lpbf www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 175 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 2.7v 1 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v = 15v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 56a
irl3103s/lpbf 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 500 1000 1500 2000 2500 3000 v , drain-to-source volta g e (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss 0 10 20 30 40 0 3 6 9 12 15 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 34a v = 15v ds v = 24v ds 0.1 1 10 100 1000 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j
i d , drain-to-source current (a)
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irl3103s/lpbf www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 t , case temperature ( c) i , drain current (a) c d v ds 90% 10% v gs t d(on) t r t d(off) t f v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd fig 10a. switching time test circuit fig 10b. switching time waveforms
irl3103s/lpbf 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v gs fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current 25 50 75 100 125 150 175 0 40 80 120 160 200 240 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 14a 24a 34a r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
irl3103s/lpbf www.irf.com 7 peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - r g v dd ? dv/dt controlled by r g ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t * circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer * reverse polarity of d.u.t for p-channel v gs [ ] [ ] *** v gs = 5.0v for logic level and 3v drive devices [ ] *** fig 14. for n-channel hexfet ? power mosfets
irl3103s/lpbf 8 www.irf.com d 2 pak part marking information (lead-free) d 2 pak package outline note: "p " in as s embly line pos ition indicates "l ead-f ree" f530s t his is an ir f 530s wit h lot code 8024 as s e mb l e d on ww 02, 2000 in t h e as s e mb ly l ine "l" assembly lot code int e rnat ional re ct if ie r logo part numbe r dat e code ye ar 0 = 2000 week 02 line l or f 530s a = as s e mb l y s it e code week 02 p = designates lead-free p r odu ct (op t ion al ) rectifier int e r nat ional logo lot code assembly ye ar 0 = 2000 dat e code part number
irl3103s/lpbf www.irf.com 9 to-262 part marking information to-262 package outline assembly lot code re ct if ie r int e rnat ional as s e mb le d on ww 19, 1997 note: "p" in as s embly line pos i ti on i ndi cates "l ead-f r ee" in the assembly line "c" logo t his is an irl3103l lot code 1789 example: line c dat e code we e k 19 ye ar 7 = 1997 part number part number logo lot code as s e mb l y int e rnat ional re ct if ie r product (optional) p = designat es lead-f ree a = as s e mb l y s it e code we e k 19 ye ar 7 = 1997 dat e code or
irl3103s/lpbf 10 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/04 d 2 pak tape & reel information dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 ( .073 ) 1.65 ( .065 ) 1.60 ( .063 ) 1.50 ( .059 ) 4.10 ( .161 ) 3.90 ( .153 ) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 ( .532 ) 12.80 ( .504 ) 330.00 ( 14.173 ) max. 27.40 ( 1.079 ) 23.90 ( .9 4 1 ) 60.00 ( 2.362 ) m in . 30.40 ( 1.197 ) m a x . 26.40 ( 1.039 ) 24.40 ( .961 ) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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